Vishay General Semiconductor - Diodes Division VS-GB75TP120N

Vishay General Semiconductor - Diodes Division VS-GB75TP120N electronic component

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Manufacturer No
VS-GB75TP120N
Package
INT-A-PAK (3 + 4)
Packaging
Bulk
Description
IGBT MODULE 1200V 150A INT-A-PAK
Detailed Description
IGBT Module Half Bridge 1200 V 150 A 543 W Chassis Mount INT-A-PAK
DataSheet
Input
Standard
Packaging
Bulk
Part Status
Obsolete
Power - Max
543 W
Manufacturer
Vishay General Semiconductor - Diodes Division
Configuration
Half Bridge
Mounting Type
Chassis Mount
NTC Thermistor
No
Package / Case
INT-A-PAK (3 + 4)
Base Product Number
GB75
Operating Temperature
150°C (TJ)
Supplier Device Package
INT-A-PAK
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 75A
Current - Collector (Ic) (Max)
150 A
Input Capacitance (Cies) @ Vce
5.52 nF @ 25 V
Current - Collector Cutoff (Max)
5 mA
Voltage - Collector Emitter Breakdown (Max)
1200 V
AttributeValue
InputStandard
PackagingBulk
Part StatusObsolete
Power - Max543 W
ManufacturerVishay General Semiconductor - Diodes Division
ConfigurationHalf Bridge
Mounting TypeChassis Mount
NTC ThermistorNo
Package / CaseINT-A-PAK (3 + 4)
Base Product NumberGB75
Operating Temperature150°C (TJ)
Supplier Device PackageINT-A-PAK
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 75A
Current - Collector (Ic) (Max)150 A
Input Capacitance (Cies) @ Vce5.52 nF @ 25 V
Current - Collector Cutoff (Max)5 mA
Voltage - Collector Emitter Breakdown (Max)1200 V

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