Vishay General Semiconductor - Diodes Division VS-ETF150Y65U

Vishay General Semiconductor - Diodes Division VS-ETF150Y65U electronic component

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Manufacturer No
VS-ETF150Y65U
Package
EMIPAK-2B
Packaging
Tray
Description
IGBT MODULE 650V 142A EMIPAK-2B
Detailed Description
IGBT Module Trench Three Level Inverter 650 V 142 A 417 W Chassis Mount EMIPAK-2B
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Input
Standard
IGBT Type
Trench
Packaging
Tray
Power - Max
417 W
Manufacturer
Vishay General Semiconductor - Diodes Division
Configuration
Three Level Inverter
Mounting Type
Chassis Mount
NTC Thermistor
No
Package / Case
EMIPAK-2B
Base Product Number
ETF150
Operating Temperature
175°C (TJ)
Supplier Device Package
EMIPAK-2B
Vce(on) (Max) @ Vge, Ic
2.06V @ 15V, 100A
Current - Collector (Ic) (Max)
142 A
Input Capacitance (Cies) @ Vce
6.6 nF @ 30 V
Current - Collector Cutoff (Max)
100 µA
Voltage - Collector Emitter Breakdown (Max)
650 V
AttributeValue
InputStandard
IGBT TypeTrench
PackagingTray
Power - Max417 W
ManufacturerVishay General Semiconductor - Diodes Division
ConfigurationThree Level Inverter
Mounting TypeChassis Mount
NTC ThermistorNo
Package / CaseEMIPAK-2B
Base Product NumberETF150
Operating Temperature175°C (TJ)
Supplier Device PackageEMIPAK-2B
Vce(on) (Max) @ Vge, Ic2.06V @ 15V, 100A
Current - Collector (Ic) (Max)142 A
Input Capacitance (Cies) @ Vce6.6 nF @ 30 V
Current - Collector Cutoff (Max)100 µA
Voltage - Collector Emitter Breakdown (Max)650 V

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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