Vishay General Semiconductor - Diodes Division VS-GP300TD60S

Vishay General Semiconductor - Diodes Division VS-GP300TD60S electronic component

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Manufacturer No
VS-GP300TD60S
Package
Dual INT-A-PAK (3 + 8)
Packaging
Tube
Description
IGBT MODULE 600V 580A INT-A-PAK
Detailed Description
IGBT Module PT, Trench Half Bridge 600 V 580 A 1136 W Chassis Mount Dual INT-A-PAK
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Input
Standard
IGBT Type
PT, Trench
Packaging
Tube
Power - Max
1136 W
Manufacturer
Vishay General Semiconductor - Diodes Division
Configuration
Half Bridge
Mounting Type
Chassis Mount
NTC Thermistor
No
Package / Case
Dual INT-A-PAK (3 + 8)
Base Product Number
GP300
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
Dual INT-A-PAK
Vce(on) (Max) @ Vge, Ic
1.45V @ 15V, 300A
Current - Collector (Ic) (Max)
580 A
Current - Collector Cutoff (Max)
150 µA
Voltage - Collector Emitter Breakdown (Max)
600 V
AttributeValue
InputStandard
IGBT TypePT, Trench
PackagingTube
Power - Max1136 W
ManufacturerVishay General Semiconductor - Diodes Division
ConfigurationHalf Bridge
Mounting TypeChassis Mount
NTC ThermistorNo
Package / CaseDual INT-A-PAK (3 + 8)
Base Product NumberGP300
Operating Temperature-40°C ~ 150°C (TJ)
Supplier Device PackageDual INT-A-PAK
Vce(on) (Max) @ Vge, Ic1.45V @ 15V, 300A
Current - Collector (Ic) (Max)580 A
Current - Collector Cutoff (Max)150 µA
Voltage - Collector Emitter Breakdown (Max)600 V

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
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