Vishay General Semiconductor - Diodes Division VS-GB75DA120UP

Vishay General Semiconductor - Diodes Division VS-GB75DA120UP electronic component

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Manufacturer No
VS-GB75DA120UP
Package
SOT-227-4, miniBLOC
Packaging
Bulk
Description
IGBT MODULE 1200V 658W SOT-227
Detailed Description
IGBT Module NPT Single 1200 V 658 W Chassis Mount SOT-227
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Input
Standard
IGBT Type
NPT
Packaging
Bulk
Power - Max
658 W
Manufacturer
Vishay General Semiconductor - Diodes Division
Configuration
Single
Mounting Type
Chassis Mount
NTC Thermistor
No
Package / Case
SOT-227-4, miniBLOC
Base Product Number
GB75
Operating Temperature
-40°C ~ 150°C (TJ)
Supplier Device Package
SOT-227
Vce(on) (Max) @ Vge, Ic
3.8V @ 15V, 75A
Current - Collector Cutoff (Max)
250 µA
Voltage - Collector Emitter Breakdown (Max)
1200 V
AttributeValue
InputStandard
IGBT TypeNPT
PackagingBulk
Power - Max658 W
ManufacturerVishay General Semiconductor - Diodes Division
ConfigurationSingle
Mounting TypeChassis Mount
NTC ThermistorNo
Package / CaseSOT-227-4, miniBLOC
Base Product NumberGB75
Operating Temperature-40°C ~ 150°C (TJ)
Supplier Device PackageSOT-227
Vce(on) (Max) @ Vge, Ic3.8V @ 15V, 75A
Current - Collector Cutoff (Max)250 µA
Voltage - Collector Emitter Breakdown (Max)1200 V

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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