Toshiba Semiconductor and Storage SSM6L56FE,LM

Toshiba Semiconductor and Storage SSM6L56FE,LM electronic component

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Manufacturer No
SSM6L56FE,LM
Quantity
595
Availability
In Stock
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N/P-CH 20V 0.8A ES6
Detailed Description
Mosfet Array 20V 800mA (Ta) 150mW (Ta) Surface Mount ES6
DataSheet
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate, 1.5V Drive
Part Status
Active
Power - Max
150mW (Ta)
Manufacturer
Toshiba Semiconductor and Storage
Configuration
N and P-Channel
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6L56
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Supplier Device Package
ES6
Gate Charge (Qg) (Max) @ Vgs
1nC @ 10V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
55pF @ 10V, 100pF @ 10V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 1.5V Drive
Part StatusActive
Power - Max150mW (Ta)
ManufacturerToshiba Semiconductor and Storage
ConfigurationN and P-Channel
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6L56
Operating Temperature150°C
Rds On (Max) @ Id, Vgs235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Supplier Device PackageES6
Gate Charge (Qg) (Max) @ Vgs1nC @ 10V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds55pF @ 10V, 100pF @ 10V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)

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