Toshiba Semiconductor and Storage SSM6L13TU(T5L,F,T)

Toshiba Semiconductor and Storage SSM6L13TU(T5L,F,T) electronic component

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Manufacturer No
SSM6L13TU(T5L,F,T)
Package
6-SMD, Flat Leads
Packaging
Tape & Reel (TR)
Description
MOSFET N/P-CH 20V 0.8A UF6
Detailed Description
Mosfet Array 20V 800mA (Ta) 500mW Surface Mount UF6
DataSheet
Packaging
Tape & Reel (TR)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate, 1.8V Drive
Part Status
Obsolete
Power - Max
500mW
Manufacturer
Toshiba Semiconductor and Storage
Configuration
N and P-Channel
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6L13
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V
Supplier Device Package
UF6
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
268pF @ 10V, 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C
800mA (Ta)
AttributeValue
PackagingTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 1.8V Drive
Part StatusObsolete
Power - Max500mW
ManufacturerToshiba Semiconductor and Storage
ConfigurationN and P-Channel
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6L13
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs143mOhm @ 600mA, 4V, 234mOhm @ 600mA, 4V
Supplier Device PackageUF6
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds268pF @ 10V, 250pF @ 10V
Current - Continuous Drain (Id) @ 25°C800mA (Ta)

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