Toshiba Semiconductor and Storage SSM6N44FE,LM

Toshiba Semiconductor and Storage SSM6N44FE,LM electronic component

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Manufacturer No
SSM6N44FE,LM
Quantity
5,115
Availability
In Stock
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 30V 0.1A ES6
Detailed Description
Mosfet Array 30V 100mA 150mW Surface Mount ES6
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
150mW
Manufacturer
Toshiba Semiconductor and Storage
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Vgs(th) (Max) @ Id
1.5V @ 100µA
Base Product Number
SSM6N44
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
4Ohm @ 10mA, 4V
Supplier Device Package
ES6
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
8.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C
100mA
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max150mW
ManufacturerToshiba Semiconductor and Storage
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Vgs(th) (Max) @ Id1.5V @ 100µA
Base Product NumberSSM6N44
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs4Ohm @ 10mA, 4V
Supplier Device PackageES6
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds8.5pF @ 3V
Current - Continuous Drain (Id) @ 25°C100mA

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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