Toshiba Semiconductor and Storage SSM6N57NU,LF

Toshiba Semiconductor and Storage SSM6N57NU,LF electronic component

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Manufacturer No
SSM6N57NU,LF
Quantity
3000
Availability
In Stock
Package
6-WDFN Exposed Pad
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET 2N-CH 30V 4A 6DFN
Detailed Description
Mosfet Array 30V 4A 1W Surface Mount 6-µDFN (2x2)
DataSheet
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Technology
MOSFET (Metal Oxide)
Part Status
Active
Power - Max
1W
Manufacturer
Toshiba Semiconductor and Storage
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6N57
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
46mOhm @ 2A, 4.5V
Supplier Device Package
6-µDFN (2x2)
Gate Charge (Qg) (Max) @ Vgs
4nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
310pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4A
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Power - Max1W
ManufacturerToshiba Semiconductor and Storage
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6N57
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs46mOhm @ 2A, 4.5V
Supplier Device Package6-µDFN (2x2)
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds310pF @ 10V
Current - Continuous Drain (Id) @ 25°C4A

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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