Toshiba Semiconductor and Storage SSM6N43FU,LF

Toshiba Semiconductor and Storage SSM6N43FU,LF electronic component

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Manufacturer No
SSM6N43FU,LF
Quantity
3,135
Availability
In Stock
Package
6-TSSOP, SC-88, SOT-363
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 20V 0.5A US6
Detailed Description
Mosfet Array 20V 500mA 200mW Surface Mount US6
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate, 1.5V Drive
Power - Max
200mW
Manufacturer
Toshiba Semiconductor and Storage
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6N43
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
630mOhm @ 200mA, 5V
Supplier Device Package
US6
Gate Charge (Qg) (Max) @ Vgs
1.23nC @ 4V
Drain to Source Voltage (Vdss)
20V
Input Capacitance (Ciss) (Max) @ Vds
46pF @ 10V
Current - Continuous Drain (Id) @ 25°C
500mA
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate, 1.5V Drive
Power - Max200mW
ManufacturerToshiba Semiconductor and Storage
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6N43
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs630mOhm @ 200mA, 5V
Supplier Device PackageUS6
Gate Charge (Qg) (Max) @ Vgs1.23nC @ 4V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds46pF @ 10V
Current - Continuous Drain (Id) @ 25°C500mA

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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