Toshiba Semiconductor and Storage SSM6J422TU,LF

Toshiba Semiconductor and Storage SSM6J422TU,LF electronic component

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Manufacturer No
SSM6J422TU,LF
Quantity
1,900
Availability
In Stock
Package
6-SMD, Flat Leads
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET P-CH 20V 4A UF6
Detailed Description
P-Channel 20 V 4A (Ta) 1W (Ta) Surface Mount UF6
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVI
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
+6V, -8V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6J422
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
42.7mOhm @ 3A, 4.5V
Power Dissipation (Max)
1W (Ta)
Supplier Device Package
UF6
Gate Charge (Qg) (Max) @ Vgs
12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
840 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)+6V, -8V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6J422
Operating Temperature150°C
Rds On (Max) @ Id, Vgs42.7mOhm @ 3A, 4.5V
Power Dissipation (Max)1W (Ta)
Supplier Device PackageUF6
Gate Charge (Qg) (Max) @ Vgs12.8 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds840 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4A (Ta)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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