Toshiba Semiconductor and Storage SSM6J214FE(TE85L,F

Toshiba Semiconductor and Storage SSM6J214FE(TE85L,F electronic component

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Manufacturer No
SSM6J214FE(TE85L,F
Quantity
12275
Availability
In Stock
Package
SOT-563, SOT-666
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 30V 3.6A ES6
Detailed Description
P-Channel 30 V 3.6A (Ta) 500mW (Ta) Surface Mount ES6
DataSheet
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVI
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Vgs(th) (Max) @ Id
1.2V @ 1mA
Base Product Number
SSM6J214
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
50mOhm @ 3A, 10V
Power Dissipation (Max)
500mW (Ta)
Supplier Device Package
ES6
Gate Charge (Qg) (Max) @ Vgs
7.9 nC @ 4.5 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 10V
Current - Continuous Drain (Id) @ 25°C
3.6A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Vgs(th) (Max) @ Id1.2V @ 1mA
Base Product NumberSSM6J214
Operating Temperature150°C
Rds On (Max) @ Id, Vgs50mOhm @ 3A, 10V
Power Dissipation (Max)500mW (Ta)
Supplier Device PackageES6
Gate Charge (Qg) (Max) @ Vgs7.9 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds560 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 10V
Current - Continuous Drain (Id) @ 25°C3.6A (Ta)

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