Toshiba Semiconductor and Storage SSM6J512NU,LF

Toshiba Semiconductor and Storage SSM6J512NU,LF electronic component

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Manufacturer No
SSM6J512NU,LF
Quantity
4,470
Availability
In Stock
Package
6-WDFN Exposed Pad
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET P-CH 12V 10A 6UDFNB
Detailed Description
P-Channel 12 V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVII
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±10V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6J512
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
16.2mOhm @ 4A, 8V
Power Dissipation (Max)
1.25W (Ta)
Supplier Device Package
6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs
19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)
12 V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 8V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSVII
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6J512
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs16.2mOhm @ 4A, 8V
Power Dissipation (Max)1.25W (Ta)
Supplier Device Package6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs19.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 8V
Current - Continuous Drain (Id) @ 25°C10A (Ta)

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Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
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