Toshiba Semiconductor and Storage SSM6J507NU,LF

Toshiba Semiconductor and Storage SSM6J507NU,LF electronic component

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Manufacturer No
SSM6J507NU,LF
Quantity
10620
Availability
In Stock
Package
6-WDFN Exposed Pad
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 30V 10A 6UDFNB
Detailed Description
P-Channel 30 V 10A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2)
DataSheet
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVI
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
+20V, -25V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Vgs(th) (Max) @ Id
2.2V @ 250µA
Base Product Number
SSM6J507
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
20mOhm @ 4A, 10V
Power Dissipation (Max)
1.25W (Ta)
Supplier Device Package
6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs
20.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Current - Continuous Drain (Id) @ 25°C
10A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSVI
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)+20V, -25V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Vgs(th) (Max) @ Id2.2V @ 250µA
Base Product NumberSSM6J507
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs20mOhm @ 4A, 10V
Power Dissipation (Max)1.25W (Ta)
Supplier Device Package6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs20.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C10A (Ta)

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