Toshiba Semiconductor and Storage SSM6J511NU,LF

Toshiba Semiconductor and Storage SSM6J511NU,LF electronic component

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Manufacturer No
SSM6J511NU,LF
Quantity
15425
Availability
In Stock
Package
6-WDFN Exposed Pad
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 12V 14A 6UDFNB
Detailed Description
P-Channel 12 V 14A (Ta) Surface Mount 6-UDFNB (2x2)
DataSheet
Mfr
Toshiba Semiconductor and Storage
Series
U-MOSVII
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
6-WDFN Exposed Pad
Vgs(th) (Max) @ Id
1V @ 1mA
Base Product Number
SSM6J511
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
9.1mOhm @ 4A, 8V
Supplier Device Package
6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs
47 nC @ 4.5 V
Drain to Source Voltage (Vdss)
12 V
Input Capacitance (Ciss) (Max) @ Vds
3350 pF @ 6 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
SeriesU-MOSVII
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case6-WDFN Exposed Pad
Vgs(th) (Max) @ Id1V @ 1mA
Base Product NumberSSM6J511
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs9.1mOhm @ 4A, 8V
Supplier Device Package6-UDFNB (2x2)
Gate Charge (Qg) (Max) @ Vgs47 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds3350 pF @ 6 V
Current - Continuous Drain (Id) @ 25°C14A (Ta)

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Packing

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Step2: Vacuum Packaging
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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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