Toshiba Semiconductor and Storage SSM6J402TU,LF

Toshiba Semiconductor and Storage SSM6J402TU,LF electronic component

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Manufacturer No
SSM6J402TU,LF
Quantity
2850
Availability
In Stock
Package
6-SMD, Flat Leads
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET P-CH 30V 2A UF6
Detailed Description
P-Channel 30 V 2A (Ta) 500mW (Ta) Surface Mount UF6
DataSheet
Mfr
Toshiba Semiconductor and Storage
FET Type
P-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
6-SMD, Flat Leads
Vgs(th) (Max) @ Id
2.6V @ 1mA
Base Product Number
SSM6J402
Operating Temperature
150°C
Rds On (Max) @ Id, Vgs
117mOhm @ 1A, 10V
Power Dissipation (Max)
500mW (Ta)
Supplier Device Package
UF6
Gate Charge (Qg) (Max) @ Vgs
5.3 nC @ 10 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
FET TypeP-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / Case6-SMD, Flat Leads
Vgs(th) (Max) @ Id2.6V @ 1mA
Base Product NumberSSM6J402
Operating Temperature150°C
Rds On (Max) @ Id, Vgs117mOhm @ 1A, 10V
Power Dissipation (Max)500mW (Ta)
Supplier Device PackageUF6
Gate Charge (Qg) (Max) @ Vgs5.3 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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Shipping Information

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DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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