Diodes Incorporated DMN61D8LVTQ-7

Diodes Incorporated DMN61D8LVTQ-7 electronic component

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Manufacturer No
DMN61D8LVTQ-7
Date Code
2404
Quantity
34,132
Availability
In Stock
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 60V 0.63A TSOT26
Detailed Description
Mosfet Array 60V 630mA 820mW Surface Mount TSOT-26
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
FET Feature
Logic Level Gate
Power - Max
820mW
Manufacturer
Diodes Incorporated
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id
2V @ 1mA
Base Product Number
DMN61
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 150mA, 5V
Supplier Device Package
TSOT-26
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 5V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
12.9pF @ 12V
Current - Continuous Drain (Id) @ 25°C
630mA
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Power - Max820mW
ManufacturerDiodes Incorporated
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Vgs(th) (Max) @ Id2V @ 1mA
Base Product NumberDMN61
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs1.8Ohm @ 150mA, 5V
Supplier Device PackageTSOT-26
Gate Charge (Qg) (Max) @ Vgs0.74nC @ 5V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds12.9pF @ 12V
Current - Continuous Drain (Id) @ 25°C630mA

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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