Diodes Incorporated DMN61D9U-13

Diodes Incorporated DMN61D9U-13 electronic component

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Manufacturer No
DMN61D9U-13
Quantity
80
Availability
In Stock
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 60V 380MA SOT23-3
Detailed Description
N-Channel 60 V 380mA (Ta) 370mW (Ta) Surface Mount SOT-23-3
DataSheet
Mfr
Diodes Incorporated
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id
1V @ 250µA
Base Product Number
DMN61
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
2Ohm @ 50mA, 5V
Power Dissipation (Max)
370mW (Ta)
Supplier Device Package
SOT-23-3
Gate Charge (Qg) (Max) @ Vgs
0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
28.5 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 5V
Current - Continuous Drain (Id) @ 25°C
380mA (Ta)
AttributeValue
MfrDiodes Incorporated
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ Id1V @ 250µA
Base Product NumberDMN61
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs2Ohm @ 50mA, 5V
Power Dissipation (Max)370mW (Ta)
Supplier Device PackageSOT-23-3
Gate Charge (Qg) (Max) @ Vgs0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds28.5 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 5V
Current - Continuous Drain (Id) @ 25°C380mA (Ta)

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