Diodes Incorporated DMT3009LDT-7

Diodes Incorporated DMT3009LDT-7 electronic component

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Manufacturer No
DMT3009LDT-7
Date Code
2315
Quantity
930
Availability
In Stock
Package
8-VDFN Exposed Pad
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET 2N-CH 30V 30A 8VDFN
Detailed Description
Mosfet Array 30V 30A 1.2W Surface Mount V-DFN3030-8 (Type K)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Technology
MOSFET (Metal Oxide)
Power - Max
1.2W
Manufacturer
Diodes Incorporated
Configuration
2 N-Channel (Dual) Asymmetrical
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Vgs(th) (Max) @ Id
3V @ 250µA
Base Product Number
DMT3009
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
11.1mOhm @ 14.4A, 10V
Supplier Device Package
V-DFN3030-8 (Type K)
Gate Charge (Qg) (Max) @ Vgs
20nC @ 15V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C
30A
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
TechnologyMOSFET (Metal Oxide)
Power - Max1.2W
ManufacturerDiodes Incorporated
Configuration2 N-Channel (Dual) Asymmetrical
Mounting TypeSurface Mount
Package / Case8-VDFN Exposed Pad
Vgs(th) (Max) @ Id3V @ 250µA
Base Product NumberDMT3009
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs11.1mOhm @ 14.4A, 10V
Supplier Device PackageV-DFN3030-8 (Type K)
Gate Charge (Qg) (Max) @ Vgs20nC @ 15V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C30A

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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