Vishay General Semiconductor - Diodes Division VS-GT50TP120N

Vishay General Semiconductor - Diodes Division VS-GT50TP120N electronic component

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Manufacturer No
VS-GT50TP120N
Package
INT-A-PAK (3 + 4)
Packaging
Bulk
Description
IGBT MODULE 1200V 100A INT-A-PAK
Detailed Description
IGBT Module Trench Half Bridge 1200 V 100 A 405 W Chassis Mount INT-A-PAK
DataSheet
Input
Standard
IGBT Type
Trench
Packaging
Bulk
Part Status
Obsolete
Power - Max
405 W
Manufacturer
Vishay General Semiconductor - Diodes Division
Configuration
Half Bridge
Mounting Type
Chassis Mount
NTC Thermistor
No
Package / Case
INT-A-PAK (3 + 4)
Base Product Number
GT50
Operating Temperature
175°C (TJ)
Supplier Device Package
INT-A-PAK
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 50A
Current - Collector (Ic) (Max)
100 A
Input Capacitance (Cies) @ Vce
6.24 nF @ 30 V
Current - Collector Cutoff (Max)
5 mA
Voltage - Collector Emitter Breakdown (Max)
1200 V
AttributeValue
InputStandard
IGBT TypeTrench
PackagingBulk
Part StatusObsolete
Power - Max405 W
ManufacturerVishay General Semiconductor - Diodes Division
ConfigurationHalf Bridge
Mounting TypeChassis Mount
NTC ThermistorNo
Package / CaseINT-A-PAK (3 + 4)
Base Product NumberGT50
Operating Temperature175°C (TJ)
Supplier Device PackageINT-A-PAK
Vce(on) (Max) @ Vge, Ic2.35V @ 15V, 50A
Current - Collector (Ic) (Max)100 A
Input Capacitance (Cies) @ Vce6.24 nF @ 30 V
Current - Collector Cutoff (Max)5 mA
Voltage - Collector Emitter Breakdown (Max)1200 V

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Step2: Vacuum Packaging
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