Toshiba Semiconductor and Storage MG400Q2YMS3(DAE)

Toshiba Semiconductor and Storage MG400Q2YMS3(DAE) electronic component

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Manufacturer No
MG400Q2YMS3(DAE)
Package
Module
Packaging
Tray
Description
SIC MOSFET MODULE, 1200V, 400A
Detailed Description
Mosfet Array 1700V (1.7kV) 250A (Tc) 1350W (Tc) Chassis Mount
DataSheet
Packaging
Tray
Technology
Silicon Carbide (SiC)
Part Status
Active
Power - Max
1350W (Tc)
Manufacturer
Toshiba Semiconductor and Storage
Configuration
2 N-Channel (Half Bridge)
Mounting Type
Chassis Mount
Package / Case
Module
Vgs(th) (Max) @ Id
5.6V @ 400mA
Operating Temperature
150°C
Drain to Source Voltage (Vdss)
1700V (1.7kV)
Input Capacitance (Ciss) (Max) @ Vds
36000pF @ 900V
Current - Continuous Drain (Id) @ 25°C
250A (Tc)
AttributeValue
PackagingTray
TechnologySilicon Carbide (SiC)
Part StatusActive
Power - Max1350W (Tc)
ManufacturerToshiba Semiconductor and Storage
Configuration2 N-Channel (Half Bridge)
Mounting TypeChassis Mount
Package / CaseModule
Vgs(th) (Max) @ Id5.6V @ 400mA
Operating Temperature150°C
Drain to Source Voltage (Vdss)1700V (1.7kV)
Input Capacitance (Ciss) (Max) @ Vds36000pF @ 900V
Current - Continuous Drain (Id) @ 25°C250A (Tc)

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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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