Renesas Electronics Corporation TP65H300G4LSG-TR

Renesas Electronics Corporation TP65H300G4LSG-TR electronic component

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Manufacturer No
TP65H300G4LSG-TR
Quantity
5
Availability
In Stock
Package
3-PowerDFN
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
GANFET N-CH 650V 6.5A 3PQFN
Detailed Description
N-Channel 650 V 6.5A (Tc) 21W (Tc) Surface Mount 3-PQFN (8x8)
DataSheet
Mfr
Renesas Electronics Corporation
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±18V
Technology
GaNFET (Gallium Nitride)
Part Status
Discontinued at DigiKey
Mounting Type
Surface Mount
Package / Case
3-PowerDFN
Vgs(th) (Max) @ Id
2.6V @ 500µA
Base Product Number
TP65H300
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
312mOhm @ 5A, 8V
Power Dissipation (Max)
21W (Tc)
Supplier Device Package
3-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs
9.6 nC @ 8 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
760 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
8V
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
AttributeValue
MfrRenesas Electronics Corporation
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)±18V
TechnologyGaNFET (Gallium Nitride)
Part StatusDiscontinued at DigiKey
Mounting TypeSurface Mount
Package / Case3-PowerDFN
Vgs(th) (Max) @ Id2.6V @ 500µA
Base Product NumberTP65H300
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs312mOhm @ 5A, 8V
Power Dissipation (Max)21W (Tc)
Supplier Device Package3-PQFN (8x8)
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 8 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)8V
Current - Continuous Drain (Id) @ 25°C6.5A (Tc)

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Shipping Information

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FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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