Renesas Electronics Corporation TP65H030G4PWS

Renesas Electronics Corporation TP65H030G4PWS electronic component

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Manufacturer No
TP65H030G4PWS
Quantity
20
Availability
In Stock
Package
TO-247-3
Packaging
Tube
Description
GANFET N-CH 650V 55.7A TO247-3
Detailed Description
N-Channel 650 V 55.7A (Tc) 192W (Tc) Through Hole TO-247-3
DataSheet
Mfr
Renesas Electronics Corporation
Series
SuperGaN®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
GaNFET (Cascode Gallium Nitride FET)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.8V @ 1mA
Base Product Number
TP65H030
Operating Temperature
-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
41mOhm @ 30A, 12V
Power Dissipation (Max)
192W (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
24.5 nC @ 12 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
12V
Current - Continuous Drain (Id) @ 25°C
55.7A (Tc)
AttributeValue
MfrRenesas Electronics Corporation
SeriesSuperGaN®
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyGaNFET (Cascode Gallium Nitride FET)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id4.8V @ 1mA
Base Product NumberTP65H030
Operating Temperature-40°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs41mOhm @ 30A, 12V
Power Dissipation (Max)192W (Tc)
Supplier Device PackageTO-247-3
Gate Charge (Qg) (Max) @ Vgs24.5 nC @ 12 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)12V
Current - Continuous Drain (Id) @ 25°C55.7A (Tc)

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Packing

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Step2: Vacuum Packaging
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Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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