Renesas Electronics Corporation TP65H100G4PS

Renesas Electronics Corporation TP65H100G4PS electronic component

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Manufacturer No
TP65H100G4PS
Quantity
31
Availability
In Stock
Package
TO-220-3
Packaging
Tube
Description
Hi Volt FETs
Detailed Description
N-Channel 650 V 18.9A (Tc) 65.8W (Tc) Through Hole TO-220AB
DataSheet
Mfr
Renesas Electronics Corporation
Series
SuperGaN®
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
GaNFET (Gallium Nitride)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4.1V @ 1.8mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
110mOhm @ 12A, 10V
Power Dissipation (Max)
65.8W (Tc)
Supplier Device Package
TO-220AB
Gate Charge (Qg) (Max) @ Vgs
14.4 nC @ 10 V
Drain to Source Voltage (Vdss)
650 V
Input Capacitance (Ciss) (Max) @ Vds
818 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
18.9A (Tc)
AttributeValue
MfrRenesas Electronics Corporation
SeriesSuperGaN®
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyGaNFET (Gallium Nitride)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-220-3
Vgs(th) (Max) @ Id4.1V @ 1.8mA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs110mOhm @ 12A, 10V
Power Dissipation (Max)65.8W (Tc)
Supplier Device PackageTO-220AB
Gate Charge (Qg) (Max) @ Vgs14.4 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds818 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C18.9A (Tc)

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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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