onsemi FJN4303RTA

onsemi FJN4303RTA electronic component

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Manufacturer
Manufacturer No
FJN4303RTA
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging
Tape & Box (TB)
Description
TRANS PREBIAS PNP 50V TO92-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3
DataSheet
Packaging
Tape & Box (TB)
Part Status
Obsolete
Power - Max
300 mW
Manufacturer
onsemi
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor Type
PNP - Pre-Biased
Resistors Included
R1 and R2
Base Product Number
FJN430
Resistor - Base (R1)
22 kOhms
Frequency - Transition
200 MHz
Supplier Device Package
TO-92-3
Resistor - Emitter Base (R2)
22 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
56 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
PackagingTape & Box (TB)
Part StatusObsolete
Power - Max300 mW
Manufactureronsemi
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor TypePNP - Pre-Biased
Resistors IncludedR1 and R2
Base Product NumberFJN430
Resistor - Base (R1)22 kOhms
Frequency - Transition200 MHz
Supplier Device PackageTO-92-3
Resistor - Emitter Base (R2)22 kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce56 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
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Step3: Anti-StaticBag
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Step4: Individual Packaging
Packaging boxes
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Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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