onsemi MMUN2214LT1G

onsemi MMUN2214LT1G electronic component

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Manufacturer
Manufacturer No
MMUN2214LT1G
Quantity
8,050
Availability
In Stock
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
TRANS PREBIAS NPN 50V SOT23-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Reel (TR); Cut Tape (CT)
Power - Max
246 mW
Manufacturer
onsemi
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
NPN - Pre-Biased
Resistors Included
R1 and R2
Base Product Number
MMUN2214
Resistor - Base (R1)
10 kOhms
Supplier Device Package
SOT-23-3 (TO-236)
Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
500nA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
PackagingTape & Reel (TR); Cut Tape (CT)
Power - Max246 mW
Manufactureronsemi
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypeNPN - Pre-Biased
Resistors IncludedR1 and R2
Base Product NumberMMUN2214
Resistor - Base (R1)10 kOhms
Supplier Device PackageSOT-23-3 (TO-236)
Resistor - Emitter Base (R2)47 kOhms
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Voltage - Collector Emitter Breakdown (Max)50 V

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Payment Method

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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