Fairchild Semiconductor FJN4314RBU

Fairchild Semiconductor FJN4314RBU electronic component

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Manufacturer No
FJN4314RBU
Package
TO-226-3, TO-92-3 (TO-226AA)
Packaging
Bulk
Description
TRANS PREBIAS PNP 50V TO92-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3
DataSheet
Packaging
Bulk
Part Status
Obsolete
Power - Max
300 mW
Manufacturer
Fairchild Semiconductor
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Type
PNP - Pre-Biased
Resistors Included
R1 and R2
Base Product Number
FJN431
Resistor - Base (R1)
4.7 kOhms
Frequency - Transition
200 MHz
Supplier Device Package
TO-92-3
Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
68 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
PackagingBulk
Part StatusObsolete
Power - Max300 mW
ManufacturerFairchild Semiconductor
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Transistor TypePNP - Pre-Biased
Resistors IncludedR1 and R2
Base Product NumberFJN431
Resistor - Base (R1)4.7 kOhms
Frequency - Transition200 MHz
Supplier Device PackageTO-92-3
Resistor - Emitter Base (R2)47 kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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