Fairchild Semiconductor FJV4101RMTF

Fairchild Semiconductor FJV4101RMTF electronic component

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Manufacturer No
FJV4101RMTF
Package
TO-236-3, SC-59, SOT-23-3
Packaging
Bulk
Description
TRANS PREBIAS PNP 50V SOT23-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 200 mW Surface Mount SOT-23-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Bulk
Power - Max
200 mW
Manufacturer
Fairchild Semiconductor
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Transistor Type
PNP - Pre-Biased
Resistors Included
R1 and R2
Base Product Number
FJV410
Resistor - Base (R1)
4.7 kOhms
Frequency - Transition
200 MHz
Supplier Device Package
SOT-23-3
Resistor - Emitter Base (R2)
4.7 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
PackagingBulk
Power - Max200 mW
ManufacturerFairchild Semiconductor
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Transistor TypePNP - Pre-Biased
Resistors IncludedR1 and R2
Base Product NumberFJV410
Resistor - Base (R1)4.7 kOhms
Frequency - Transition200 MHz
Supplier Device PackageSOT-23-3
Resistor - Emitter Base (R2)4.7 kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
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