onsemi FJN4304RTA

onsemi FJN4304RTA electronic component

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Manufacturer
Manufacturer No
FJN4304RTA
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging
Tape & Box (TB)
Description
TRANS PREBIAS PNP 50V TO92-3
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Packaging
Tape & Box (TB)
Power - Max
300 mW
Manufacturer
onsemi
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor Type
PNP - Pre-Biased
Resistors Included
R1 and R2
Base Product Number
FJN430
Resistor - Base (R1)
47 kOhms
Frequency - Transition
200 MHz
Supplier Device Package
TO-92-3
Resistor - Emitter Base (R2)
47 kOhms
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)
100 mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
68 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)
50 V
AttributeValue
PackagingTape & Box (TB)
Power - Max300 mW
Manufactureronsemi
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Transistor TypePNP - Pre-Biased
Resistors IncludedR1 and R2
Base Product NumberFJN430
Resistor - Base (R1)47 kOhms
Frequency - Transition200 MHz
Supplier Device PackageTO-92-3
Resistor - Emitter Base (R2)47 kOhms
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector (Ic) (Max)100 mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce68 @ 5mA, 5V
Voltage - Collector Emitter Breakdown (Max)50 V

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Payment Method

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Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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