Navitas Semiconductor, Inc. G3R160MT17J

Navitas Semiconductor, Inc. G3R160MT17J electronic component

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Manufacturer No
G3R160MT17J
Quantity
1
Availability
In Stock
Package
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging
Tube
Description
SIC MOSFET N-CH 18A TO263-7
Detailed Description
N-Channel 1700 V 18A (Tc) 187W (Tc) Surface Mount TO-263-7
DataSheet
Mfr
Navitas Semiconductor, Inc.
Series
G3R™, LoRing™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±15V
Technology
SiCFET (Silicon Carbide)
Part Status
Last Time Buy
Mounting Type
Surface Mount
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id
2.7V @ 5mA
Base Product Number
G3R160
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
224mOhm @ 10A, 15V
Power Dissipation (Max)
187W (Tc)
Supplier Device Package
TO-263-7
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 15 V
Drain to Source Voltage (Vdss)
1700 V
Input Capacitance (Ciss) (Max) @ Vds
854 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
AttributeValue
MfrNavitas Semiconductor, Inc.
SeriesG3R™, LoRing™
FET TypeN-Channel
PackagingTube
Vgs (Max)±15V
TechnologySiCFET (Silicon Carbide)
Part StatusLast Time Buy
Mounting TypeSurface Mount
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id2.7V @ 5mA
Base Product NumberG3R160
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs224mOhm @ 10A, 15V
Power Dissipation (Max)187W (Tc)
Supplier Device PackageTO-263-7
Gate Charge (Qg) (Max) @ Vgs29 nC @ 15 V
Drain to Source Voltage (Vdss)1700 V
Input Capacitance (Ciss) (Max) @ Vds854 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C18A (Tc)

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