Navitas Semiconductor, Inc. G3R75MT12D

Navitas Semiconductor, Inc. G3R75MT12D electronic component

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Manufacturer No
G3R75MT12D
Quantity
6
Availability
In Stock
Package
TO-247-3
Packaging
Tube
Description
SIC MOSFET N-CH 41A TO247-3
Detailed Description
N-Channel 1200 V 41A (Tc) 207W (Tc) Through Hole TO-247-3
DataSheet
Mfr
Navitas Semiconductor, Inc.
Series
G3R™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+22V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Last Time Buy
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
2.69V @ 7.5mA
Base Product Number
G3R75
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
Power Dissipation (Max)
207W (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
AttributeValue
MfrNavitas Semiconductor, Inc.
SeriesG3R™
FET TypeN-Channel
PackagingTube
Vgs (Max)+22V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusLast Time Buy
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id2.69V @ 7.5mA
Base Product NumberG3R75
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs90mOhm @ 20A, 15V
Power Dissipation (Max)207W (Tc)
Supplier Device PackageTO-247-3
Gate Charge (Qg) (Max) @ Vgs54 nC @ 15 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds1560 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C41A (Tc)

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