Step1: Product
Navitas Semiconductor, Inc. G3R160MT12D
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Manufacturer
Manufacturer No
G3R160MT12D
Quantity
9
Availability
In Stock
Package
TO-247-3
Packaging
Tube
Description
SIC MOSFET N-CH 22A TO247-3
Detailed Description
N-Channel 1200 V 22A (Tc) 123W (Tc) Through Hole TO-247-3
Datasheet
Mfr
Navitas Semiconductor, Inc.
Series
G3R™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±15V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
2.69V @ 5mA
Base Product Number
G3R160
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
192mOhm @ 10A, 15V
Power Dissipation (Max)
123W (Tc)
Supplier Device Package
TO-247-3
Gate Charge (Qg) (Max) @ Vgs
28 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
730 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Navitas Semiconductor, Inc. |
| Series | G3R™ |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±15V |
| Technology | SiCFET (Silicon Carbide) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Vgs(th) (Max) @ Id | 2.69V @ 5mA |
| Base Product Number | G3R160 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 192mOhm @ 10A, 15V |
| Power Dissipation (Max) | 123W (Tc) |
| Supplier Device Package | TO-247-3 |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Purchase & Inquiry
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
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