Navitas Semiconductor, Inc. G3R160MT12J

Navitas Semiconductor, Inc. G3R160MT12J electronic component

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Manufacturer No
G3R160MT12J
Package
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging
Tube
Description
SIC MOSFET N-CH 19A TO263-7
Detailed Description
N-Channel 1200 V 19A (Tc) 128W (Tc) Surface Mount TO-263-7
DataSheet
Mfr
Navitas Semiconductor, Inc.
Series
G3R™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+20V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Last Time Buy
Mounting Type
Surface Mount
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id
2.7V @ 5mA (Typ)
Base Product Number
G3R160
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
208mOhm @ 10A, 15V
Power Dissipation (Max)
128W (Tc)
Supplier Device Package
TO-263-7
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
724 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
AttributeValue
MfrNavitas Semiconductor, Inc.
SeriesG3R™
FET TypeN-Channel
PackagingTube
Vgs (Max)+20V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusLast Time Buy
Mounting TypeSurface Mount
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id2.7V @ 5mA (Typ)
Base Product NumberG3R160
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs208mOhm @ 10A, 15V
Power Dissipation (Max)128W (Tc)
Supplier Device PackageTO-263-7
Gate Charge (Qg) (Max) @ Vgs23 nC @ 15 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds724 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C19A (Tc)

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