Vishay Siliconix SI4825DY-T1-E3

Vishay Siliconix SI4825DY-T1-E3 electronic component

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Manufacturer
Manufacturer No
SI4825DY-T1-E3
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Tape & Reel (TR)
Description
MOSFET P-CH 30V 8.1A 8SO
Detailed Description
P-Channel 30 V 8.1A (Ta) 1.5W (Ta) Surface Mount 8-SOIC
DataSheet
Mfr
Vishay Siliconix
Series
TrenchFET®
FET Type
P-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±25V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
3V @ 250µA
Base Product Number
SI4825
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
14mOhm @ 11.5A, 10V
Power Dissipation (Max)
1.5W (Ta)
Supplier Device Package
8-SOIC
Gate Charge (Qg) (Max) @ Vgs
71 nC @ 10 V
Drain to Source Voltage (Vdss)
30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
8.1A (Ta)
AttributeValue
MfrVishay Siliconix
SeriesTrenchFET®
FET TypeP-Channel
PackagingTape & Reel (TR)
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id3V @ 250µA
Base Product NumberSI4825
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs14mOhm @ 11.5A, 10V
Power Dissipation (Max)1.5W (Ta)
Supplier Device Package8-SOIC
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C8.1A (Ta)

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Packing

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Step1: Product
Vacuum packaged product
Step2: Vacuum Packaging
Product in anti-static bag
Step3: Anti-StaticBag
Individual packaging box
Step4: Individual Packaging
Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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