Vishay Siliconix SI4823DY-T1-GE3

Vishay Siliconix SI4823DY-T1-GE3 electronic component

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Manufacturer
Manufacturer No
SI4823DY-T1-GE3
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Tape & Reel (TR)
Description
MOSFET P-CH 20V 4.1A 8SO
Detailed Description
P-Channel 20 V 4.1A (Tc) 1.7W (Ta), 2.8W (Tc) Surface Mount 8-SOIC
DataSheet
Mfr
Vishay Siliconix
Series
LITTLE FOOT®
FET Type
P-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±12V
Technology
MOSFET (Metal Oxide)
FET Feature
Schottky Diode (Isolated)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
1.5V @ 250µA
Base Product Number
SI4823
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
108mOhm @ 3.3A, 4.5V
Power Dissipation (Max)
1.7W (Ta), 2.8W (Tc)
Supplier Device Package
8-SOIC
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Drain to Source Voltage (Vdss)
20 V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C
4.1A (Tc)
AttributeValue
MfrVishay Siliconix
SeriesLITTLE FOOT®
FET TypeP-Channel
PackagingTape & Reel (TR)
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
FET FeatureSchottky Diode (Isolated)
Part StatusObsolete
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id1.5V @ 250µA
Base Product NumberSI4823
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs108mOhm @ 3.3A, 4.5V
Power Dissipation (Max)1.7W (Ta), 2.8W (Tc)
Supplier Device Package8-SOIC
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)

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