Vishay Siliconix IRFR210PBF

Vishay Siliconix IRFR210PBF electronic component

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Manufacturer
Manufacturer No
IRFR210PBF
Quantity
9
Availability
In Stock
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tube
Description
MOSFET N-CH 200V 2.6A DPAK
Detailed Description
N-Channel 200 V 2.6A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount DPAK
DataSheet
Mfr
Vishay Siliconix
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
IRFR210
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
1.5Ohm @ 1.6A, 10V
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
Supplier Device Package
DPAK
Gate Charge (Qg) (Max) @ Vgs
8.2 nC @ 10 V
Drain to Source Voltage (Vdss)
200 V
Input Capacitance (Ciss) (Max) @ Vds
140 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
2.6A (Tc)
AttributeValue
MfrVishay Siliconix
FET TypeN-Channel
PackagingTube
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id4V @ 250µA
Base Product NumberIRFR210
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs1.5Ohm @ 1.6A, 10V
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Supplier Device PackageDPAK
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C2.6A (Tc)

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Packaging boxes
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