Toshiba Semiconductor and Storage 2SK4021(Q)

Toshiba Semiconductor and Storage 2SK4021(Q) electronic component

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Manufacturer No
2SK4021(Q)
Package
TO-251-3 Stub Leads, IPAK
Packaging
Bulk
Description
MOSFET N-CH 250V 4.5A PW-MOLD2
Detailed Description
N-Channel 250 V 4.5A (Ta) 20W (Tc) Through Hole PW-MOLD2
DataSheet
Mfr
Toshiba Semiconductor and Storage
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-251-3 Stub Leads, IPAK
Vgs(th) (Max) @ Id
3.5V @ 1mA
Base Product Number
2SK4021
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
1Ohm @ 2.5A, 10V
Power Dissipation (Max)
20W (Tc)
Supplier Device Package
PW-MOLD2
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 10 V
Drain to Source Voltage (Vdss)
250 V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
4.5A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
FET TypeN-Channel
PackagingBulk
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-251-3 Stub Leads, IPAK
Vgs(th) (Max) @ Id3.5V @ 1mA
Base Product Number2SK4021
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs1Ohm @ 2.5A, 10V
Power Dissipation (Max)20W (Tc)
Supplier Device PackagePW-MOLD2
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)

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