Toshiba Semiconductor and Storage 2SK2266(TE24R,Q)

Toshiba Semiconductor and Storage 2SK2266(TE24R,Q) electronic component

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Manufacturer No
2SK2266(TE24R,Q)
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR)
Description
MOSFET N-CH 60V 45A TO220SM
Detailed Description
N-Channel 60 V 45A (Ta) 65W (Tc) Surface Mount TO-220SM
DataSheet
Mfr
Toshiba Semiconductor and Storage
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2V @ 1mA
Base Product Number
2SK2266
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
30mOhm @ 25A, 10V
Power Dissipation (Max)
65W (Tc)
Supplier Device Package
TO-220SM
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Current - Continuous Drain (Id) @ 25°C
45A (Ta)
AttributeValue
MfrToshiba Semiconductor and Storage
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id2V @ 1mA
Base Product Number2SK2266
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs30mOhm @ 25A, 10V
Power Dissipation (Max)65W (Tc)
Supplier Device PackageTO-220SM
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Current - Continuous Drain (Id) @ 25°C45A (Ta)

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