Taiwan Semiconductor Corporation TSM4N70CH C5G

Taiwan Semiconductor Corporation TSM4N70CH C5G electronic component

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Manufacturer No
TSM4N70CH C5G
Package
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging
Tube
Description
MOSFET N-CH 700V 3.5A TO251
Detailed Description
N-Channel 700 V 3.5A (Tc) 56W (Tc) Through Hole TO-251 (IPAK)
DataSheet
Mfr
Taiwan Semiconductor Corporation
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
3.3Ohm @ 2A, 10V
Power Dissipation (Max)
56W (Tc)
Supplier Device Package
TO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 10 V
Drain to Source Voltage (Vdss)
700 V
Input Capacitance (Ciss) (Max) @ Vds
595 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
3.5A (Tc)
AttributeValue
MfrTaiwan Semiconductor Corporation
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs3.3Ohm @ 2A, 10V
Power Dissipation (Max)56W (Tc)
Supplier Device PackageTO-251 (IPAK)
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Drain to Source Voltage (Vdss)700 V
Input Capacitance (Ciss) (Max) @ Vds595 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C3.5A (Tc)

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