Step1: Product
Taiwan Semiconductor Corporation TSM85N10CZ C0G
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Manufacturer
Manufacturer No
TSM85N10CZ C0G
Package
TO-220-3
Packaging
Tube
Description
MOSFET N-CHANNEL 100V 81A TO220
Detailed Description
N-Channel 100 V 81A (Tc) 210W (Tc) Through Hole TO-220
Datasheet
Mfr
Taiwan Semiconductor Corporation
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 250µA
Base Product Number
TSM85
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
10mOhm @ 40A, 10V
Power Dissipation (Max)
210W (Tc)
Supplier Device Package
TO-220
Gate Charge (Qg) (Max) @ Vgs
154 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
81A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| FET Type | N-Channel |
| Packaging | Tube |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | TSM85 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 40A, 10V |
| Power Dissipation (Max) | 210W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
Purchase & Inquiry
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Important Notes
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Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
