Taiwan Semiconductor Corporation TSM4N60ECP ROG

Taiwan Semiconductor Corporation TSM4N60ECP ROG electronic component

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Manufacturer No
TSM4N60ECP ROG
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR); Cut Tape (CT)
Description
MOSFET N-CHANNEL 600V 4A TO252
Detailed Description
N-Channel 600 V 4A (Tc) 86.2W (Tc) Surface Mount TO-252 (DPAK)
DataSheet
Mfr
Taiwan Semiconductor Corporation
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT)
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
5V @ 250µA
Base Product Number
TSM4N60
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
2.5Ohm @ 2A, 10V
Power Dissipation (Max)
86.2W (Tc)
Supplier Device Package
TO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Drain to Source Voltage (Vdss)
600 V
Input Capacitance (Ciss) (Max) @ Vds
545 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
AttributeValue
MfrTaiwan Semiconductor Corporation
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT)
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id5V @ 250µA
Base Product NumberTSM4N60
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs2.5Ohm @ 2A, 10V
Power Dissipation (Max)86.2W (Tc)
Supplier Device PackageTO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds545 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)

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