Step1: Product
Taiwan Semiconductor Corporation TSM480P06CZ C0G
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Manufacturer
Manufacturer No
TSM480P06CZ C0G
Package
TO-220-3
Packaging
Bulk
Description
MOSFET P-CH 60V 20A TO220
Detailed Description
P-Channel 60 V 20A (Tc) 66W (Tc) Through Hole TO-220
Datasheet
Mfr
Taiwan Semiconductor Corporation
FET Type
P-Channel
Packaging
Bulk
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
2.2V @ 250µA
Operating Temperature
-50°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
48mOhm @ 8A, 10V
Power Dissipation (Max)
66W (Tc)
Supplier Device Package
TO-220
Gate Charge (Qg) (Max) @ Vgs
22.4 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
1250 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
| Attribute | Value |
|---|---|
| Mfr | Taiwan Semiconductor Corporation |
| FET Type | P-Channel |
| Packaging | Bulk |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
| Power Dissipation (Max) | 66W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Purchase & Inquiry
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Our sales team will respond to your request by email within 24 hours.
Important Notes
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2. Since inventory and pricing may change from time to time, our sales manager will reconfirm your order and notify you if any updates are needed.
Payment Method
Shipping Method
- Shipped from
- Hongkong/Shenzhen warehouse
- Estimated Ship Date
- Oct 3, 2026 - Oct 4, 2026
- Lead Time
- Contact us to confirm availability
- Shipping Fee
- Calculated based on your destination
Packages
