Taiwan Semiconductor Corporation TSM13ND50CI

Taiwan Semiconductor Corporation TSM13ND50CI electronic component

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Manufacturer No
TSM13ND50CI
Package
TO-220-3 Full Pack, Isolated Tab
Packaging
Tube
Description
MOSFET N-CH 500V 13A ITO220
Detailed Description
N-Channel 500 V 13A (Tc) 57W (Tc) Through Hole ITO-220
DataSheet
Mfr
Taiwan Semiconductor Corporation
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
±30V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack, Isolated Tab
Vgs(th) (Max) @ Id
3.8V @ 250µA
Base Product Number
TSM13
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
480mOhm @ 3.3A, 10V
Power Dissipation (Max)
57W (Tc)
Supplier Device Package
ITO-220
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Drain to Source Voltage (Vdss)
500 V
Input Capacitance (Ciss) (Max) @ Vds
1877 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
AttributeValue
MfrTaiwan Semiconductor Corporation
FET TypeN-Channel
PackagingTube
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Isolated Tab
Vgs(th) (Max) @ Id3.8V @ 250µA
Base Product NumberTSM13
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs480mOhm @ 3.3A, 10V
Power Dissipation (Max)57W (Tc)
Supplier Device PackageITO-220
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Drain to Source Voltage (Vdss)500 V
Input Capacitance (Ciss) (Max) @ Vds1877 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C13A (Tc)

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