Taiwan Semiconductor Corporation TSM060N03CP

Taiwan Semiconductor Corporation TSM060N03CP electronic component

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Manufacturer No
TSM060N03CP
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging
Tape & Reel (TR)
Description
30V, 70A, SINGLE N-CHANNEL POWER
Detailed Description
N-Channel 30 V 80A (Tc) 54W (Tc) Surface Mount TO-252 (DPAK)
DataSheet
Mfr
Taiwan Semiconductor Corporation
FET Type
N-Channel
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Active
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
TSM060
Operating Temperature
150°C (TJ)
Rds On (Max) @ Id, Vgs
6mOhm @ 20A, 10V
Power Dissipation (Max)
54W (Tc)
Supplier Device Package
TO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs
11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss)
30 V
Input Capacitance (Ciss) (Max) @ Vds
1160 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
AttributeValue
MfrTaiwan Semiconductor Corporation
FET TypeN-Channel
PackagingTape & Reel (TR)
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberTSM060
Operating Temperature150°C (TJ)
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 10V
Power Dissipation (Max)54W (Tc)
Supplier Device PackageTO-252 (DPAK)
Gate Charge (Qg) (Max) @ Vgs11.1 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1160 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)

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