Renesas Electronics Corporation NP82N04MUG-S18-AY

Renesas Electronics Corporation NP82N04MUG-S18-AY electronic component

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Manufacturer No
NP82N04MUG-S18-AY
Package
TO-220-3
Packaging
Tube
Description
MOSFET N-CH 40V 82A TO220-3
Detailed Description
N-Channel 40 V 82A (Tc) 1.8W (Ta), 143W (Tc) Through Hole TO-220-3
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
Renesas Electronics Corporation
Grade
Automotive
FET Type
N-Channel
Packaging
Tube
Technology
MOSFET (Metal Oxide)
Mounting Type
Through Hole
Qualification
AEC-Q101
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
175°C (TJ)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 41A, 10V
Power Dissipation (Max)
1.8W (Ta), 143W (Tc)
Supplier Device Package
TO-220-3
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Drain to Source Voltage (Vdss)
40 V
Input Capacitance (Ciss) (Max) @ Vds
9750 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
AttributeValue
MfrRenesas Electronics Corporation
GradeAutomotive
FET TypeN-Channel
PackagingTube
TechnologyMOSFET (Metal Oxide)
Mounting TypeThrough Hole
QualificationAEC-Q101
Package / CaseTO-220-3
Vgs(th) (Max) @ Id4V @ 250µA
Operating Temperature175°C (TJ)
Rds On (Max) @ Id, Vgs4.2mOhm @ 41A, 10V
Power Dissipation (Max)1.8W (Ta), 143W (Tc)
Supplier Device PackageTO-220-3
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds9750 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C82A (Tc)

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 4, 2026 - Oct 5, 2026
Shipping Fee
Calculated based on your destination

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