Renesas NP82N10PUF-E1-AY

Renesas NP82N10PUF-E1-AY electronic component

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Manufacturer
Manufacturer No
NP82N10PUF-E1-AY
Package
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging
Bulk
Description
NP82N10PUF-E1-AY - MOS FIELD EFF
Detailed Description
N-Channel 100 V 82A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263-3
DataSheet
Mfr
Renesas
Grade
Automotive
FET Type
N-Channel
Packaging
Bulk
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Part Status
Obsolete
Mounting Type
Surface Mount
Qualification
AEC-Q101
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id
3.3V @ 250µA
Operating Temperature
175°C
Rds On (Max) @ Id, Vgs
15mOhm @ 41A, 10V
Power Dissipation (Max)
1.8W (Ta), 150W (Tc)
Supplier Device Package
TO-263-3
Gate Charge (Qg) (Max) @ Vgs
96 nC @ 10 V
Drain to Source Voltage (Vdss)
100 V
Input Capacitance (Ciss) (Max) @ Vds
4350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
5.8V, 10V
Current - Continuous Drain (Id) @ 25°C
82A (Tc)
AttributeValue
MfrRenesas
GradeAutomotive
FET TypeN-Channel
PackagingBulk
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Part StatusObsolete
Mounting TypeSurface Mount
QualificationAEC-Q101
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id3.3V @ 250µA
Operating Temperature175°C
Rds On (Max) @ Id, Vgs15mOhm @ 41A, 10V
Power Dissipation (Max)1.8W (Ta), 150W (Tc)
Supplier Device PackageTO-263-3
Gate Charge (Qg) (Max) @ Vgs96 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5.8V, 10V
Current - Continuous Drain (Id) @ 25°C82A (Tc)

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Shipping Information

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DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
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EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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