NoMIS Power N3T080MP120D

NoMIS Power N3T080MP120D electronic component

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Manufacturer
Manufacturer No
N3T080MP120D
Package
TO-247-3
Packaging
Tube
Description
1200 V, 80 m SiC MOSFET, TO-247-
Detailed Description
N-Channel 1200 V 38A 188W (Tc) Through Hole TO-247-3L
Datasheet
ISO 13485 certification
ISO 14001 certification
Five-Star Service certification
UKAS management certification
IAF recognition arrangement certification
Mfr
NoMIS Power
Series
1200
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+20V, -5V
Technology
SiCFET (Silicon Carbide)
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
3V @ 15mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
100mOhm @ 15A, 20V
Power Dissipation (Max)
188W (Tc)
Supplier Device Package
TO-247-3L
Gate Charge (Qg) (Max) @ Vgs
53 nC @ 20 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
896 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Current - Continuous Drain (Id) @ 25°C
38A
AttributeValue
MfrNoMIS Power
Series1200
FET TypeN-Channel
PackagingTube
Vgs (Max)+20V, -5V
TechnologySiCFET (Silicon Carbide)
Mounting TypeThrough Hole
Package / CaseTO-247-3
Vgs(th) (Max) @ Id3V @ 15mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs100mOhm @ 15A, 20V
Power Dissipation (Max)188W (Tc)
Supplier Device PackageTO-247-3L
Gate Charge (Qg) (Max) @ Vgs53 nC @ 20 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds896 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)20V
Current - Continuous Drain (Id) @ 25°C38A

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Payment Method

Transaction fee is charged according to bank/payment system rules.

Shipping Method

Shipped from
Hongkong/Shenzhen warehouse
Estimated Ship Date
Oct 3, 2026 - Oct 4, 2026
Shipping Fee
Calculated based on your destination

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