Navitas Semiconductor, Inc. G3R40MT12J-TR

Navitas Semiconductor, Inc. G3R40MT12J-TR electronic component

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Manufacturer No
G3R40MT12J-TR
Package
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
1200V 40M TO-263-7 G3R SIC MOSFE
Detailed Description
N-Channel 1200 V 66A (Tc) 330W (Tc) Surface Mount TO-263-7
DataSheet
Mfr
Navitas Semiconductor, Inc.
Series
G3R™, LoRing™
FET Type
N-Channel
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
+22V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Obsolete
Mounting Type
Surface Mount
Package / Case
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id
2.7V @ 18mA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
45mOhm @ 35A, 18V
Power Dissipation (Max)
330W (Tc)
Supplier Device Package
TO-263-7
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
2897 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V, 18V
Current - Continuous Drain (Id) @ 25°C
66A (Tc)
AttributeValue
MfrNavitas Semiconductor, Inc.
SeriesG3R™, LoRing™
FET TypeN-Channel
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)+22V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusObsolete
Mounting TypeSurface Mount
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id2.7V @ 18mA
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs45mOhm @ 35A, 18V
Power Dissipation (Max)330W (Tc)
Supplier Device PackageTO-263-7
Gate Charge (Qg) (Max) @ Vgs88 nC @ 15 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds2897 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Current - Continuous Drain (Id) @ 25°C66A (Tc)

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