Navitas Semiconductor, Inc. G3R20MT12N

Navitas Semiconductor, Inc. G3R20MT12N electronic component

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Manufacturer No
G3R20MT12N
Package
SOT-227-4, miniBLOC
Packaging
Tube
Description
SIC MOSFET N-CH 105A SOT227
Detailed Description
N-Channel 1200 V 105A (Tc) 365W (Tc) Chassis Mount SOT-227
DataSheet
Mfr
Navitas Semiconductor, Inc.
Series
G3R™
FET Type
N-Channel
Packaging
Tube
Vgs (Max)
+20V, -10V
Technology
SiCFET (Silicon Carbide)
Part Status
Last Time Buy
Mounting Type
Chassis Mount
Package / Case
SOT-227-4, miniBLOC
Vgs(th) (Max) @ Id
2.69V @ 15mA
Base Product Number
G3R20
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 15V
Power Dissipation (Max)
365W (Tc)
Supplier Device Package
SOT-227
Gate Charge (Qg) (Max) @ Vgs
219 nC @ 15 V
Drain to Source Voltage (Vdss)
1200 V
Input Capacitance (Ciss) (Max) @ Vds
5873 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)
15V
Current - Continuous Drain (Id) @ 25°C
105A (Tc)
AttributeValue
MfrNavitas Semiconductor, Inc.
SeriesG3R™
FET TypeN-Channel
PackagingTube
Vgs (Max)+20V, -10V
TechnologySiCFET (Silicon Carbide)
Part StatusLast Time Buy
Mounting TypeChassis Mount
Package / CaseSOT-227-4, miniBLOC
Vgs(th) (Max) @ Id2.69V @ 15mA
Base Product NumberG3R20
Operating Temperature-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs24mOhm @ 60A, 15V
Power Dissipation (Max)365W (Tc)
Supplier Device PackageSOT-227
Gate Charge (Qg) (Max) @ Vgs219 nC @ 15 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds5873 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On)15V
Current - Continuous Drain (Id) @ 25°C105A (Tc)

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