Goford Semiconductor GT090N06D52

Goford Semiconductor GT090N06D52 electronic component

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Manufacturer No
GT090N06D52
Package
8-PowerTDFN
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET 2N-CH 60V 40A 8DFN
Detailed Description
Mosfet Array 60V 40A (Tc) 62W (Tc) Surface Mount 8-DFN (4.9x5.75)
DataSheet
Series
SGT
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Technology
MOSFET (Metal Oxide)
Part Status
Active
Power - Max
62W (Tc)
Manufacturer
Goford Semiconductor
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Vgs(th) (Max) @ Id
2.5V @ 250µA
Base Product Number
GT090N06
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
14mOhm @ 14A, 10V
Supplier Device Package
8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
1011pF @ 30V
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
AttributeValue
SeriesSGT
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Power - Max62W (Tc)
ManufacturerGoford Semiconductor
Configuration2 N-Channel (Dual)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Vgs(th) (Max) @ Id2.5V @ 250µA
Base Product NumberGT090N06
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs14mOhm @ 14A, 10V
Supplier Device Package8-DFN (4.9x5.75)
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds1011pF @ 30V
Current - Continuous Drain (Id) @ 25°C40A (Tc)

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Packing

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Vacuum packaged product
Step2: Vacuum Packaging
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Step3: Anti-StaticBag
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Packaging boxes
Step5: Packaging Boxes

Shipping Information

Shipping TypeShip FeeLead Time
DHLDHL$20.00-$40.00 (0.50 KG)2-5 days
FedExFedex$20.00-$40.00 (0.50 KG)2-5 days
UPSUPS$20.00-$40.00 (0.50 KG)2-5 days
EMSEMS$20.00-$40.00 (0.50 KG)2-5 days

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