Goford Semiconductor G05NP06S2

Goford Semiconductor G05NP06S2 electronic component

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Manufacturer No
G05NP06S2
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
Tape & Reel (TR); Cut Tape (CT);
Description
MOSFET N/P-CH 60V 5A 8SOP
Detailed Description
Mosfet Array 60V 5A (Tc), 3.1A (Tc) 2.5W (Tc), 1.9W (Tc) Surface Mount 8-SOP
DataSheet
Series
TrenchFET®
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Technology
MOSFET (Metal Oxide)
Part Status
Active
Power - Max
2.5W (Tc), 1.9W (Tc)
Manufacturer
Goford Semiconductor
Configuration
N and P-Channel
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id
2V @ 250µA, 2.2V @ 250µA
Base Product Number
G05N
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
Supplier Device Package
8-SOP
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V, 37nC @ 10V
Drain to Source Voltage (Vdss)
60V
Input Capacitance (Ciss) (Max) @ Vds
1336pF @ 30V, 1454pF @ 30V
Current - Continuous Drain (Id) @ 25°C
5A (Tc), 3.1A (Tc)
AttributeValue
SeriesTrenchFET®
PackagingTape & Reel (TR); Cut Tape (CT); Digi-Reel®
TechnologyMOSFET (Metal Oxide)
Part StatusActive
Power - Max2.5W (Tc), 1.9W (Tc)
ManufacturerGoford Semiconductor
ConfigurationN and P-Channel
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Vgs(th) (Max) @ Id2V @ 250µA, 2.2V @ 250µA
Base Product NumberG05N
Operating Temperature-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs36mOhm @ 4.3A, 10V, 80mOhm @ 3.1A, 10V
Supplier Device Package8-SOP
Gate Charge (Qg) (Max) @ Vgs22nC @ 10V, 37nC @ 10V
Drain to Source Voltage (Vdss)60V
Input Capacitance (Ciss) (Max) @ Vds1336pF @ 30V, 1454pF @ 30V
Current - Continuous Drain (Id) @ 25°C5A (Tc), 3.1A (Tc)

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